Electron localization and noise in silicon carbide inversion layers

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 73, Issue 2, 1996, Pages 325-337

  Ouisse, T ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041388292     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418639609365828     Document Type: Article

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