Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2684-2689

  Kuboyama, Satoshi ^a   Shindou, Hiroyuki ^a   Hirao, Toshio ^b   Matsuda, Sumio ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Bulk damage factor; Charge coupled device (CCD); Displacement damage; Electrons; Heavy ions; Isolated point defects; Nonionizing energy loss (NIEL); Primary knocked on atom (PKA); Protons

Indexed keywords

ELECTRONS; ENERGY DISSIPATION; IRRADIATION; POINT DEFECTS; PROTONS; SEMICONDUCTING SILICON;

BULK DAMAGE FACTOR;

CHARGE COUPLED DEVICES;

EID: 0036957349     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805360     Document Type: Conference Paper

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