Correlation of proton radiation damage in InGaAs-GaAs quantum-well light-emitting diodes

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1773-1777

  Walters, Robert J ^a   Messenger, Scott R ^b   Summers, Geoffrey P ^a,c   Burke, Edward A ^b   Khanna, Shyam M ^d   Estan, Diego ^d   Erhardt, Lorne S ^d   Liu, Hui Chun ^e   Gao, Mae ^e   Buchanan, Margaret ^e   SpringThorpe, Anthony J ^f   Houdayer, Alain ^g   Carlone, Cosmo ^h  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^d DEFENCE RESEARCH AND DEVELOPMENT CANADA   (Canada)

^e NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^f NORTEL NETWORKS   (Canada)

^g UNIVERSITÉ DE MONTRÉAL   (Canada)

^h UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

Displacement damage; Nonionizing energy loss; Optoelectronic

Indexed keywords

CORRELATION METHODS; DATA REDUCTION; INTEGRATED OPTOELECTRONICS; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

NONIONIZING ENERGY LOSSES (NIEL);

LIGHT EMITTING DIODES;

EID: 0035722062     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983129     Document Type: Conference Paper

References (15)

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13. Proton and electron damage coefficients for GaAs/Ge solar cells
14. NIEL and damage correlations for high energy protons in gallium arsenide devices