NIEL and damage correlations for high-energy protons in gallium arsenide devices

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2121-2126

  Messenger, Scott R ^a   Walters, Robert J ^b   Burke, Edward A ^a   Summers, Geoffrey P ^b,c   Xapsos, Michael A ^b,d  

^a SFA INC   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^d NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

GaAs; Nonionizing energy loss (NIEL); Proton damage

Indexed keywords

ANNEALING; LIGHT EMITTING DIODES; PROTONS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

NONIONIZING ENERGY LOSS (NIEL);

HIGH ENERGY PHYSICS;

EID: 0035720331     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983182     Document Type: Conference Paper

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