Electrical and structural properties of polycrystalline silicon

Journal of Applied Physics

Volumn 87, Issue 11, 2000, Pages 7913-7926

  Tringe, Joseph W ^a   Plummer, James D ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001054316     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373475     Document Type: Article

References (27)

1. J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975).
2. G. Baccarani, B. Ricco, and B. Spadini, J. Appl. Phys. 49, 5565 (1978).
3. T. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays, 2nd ed. (Kluwer, Boston, 1998).
4. G. J. Korsh and R. S. Muller, Solid-State Electron. 21, 1045 (1978).
5. N. C.-C. Lu, L. Gerzberg, C.-Y. Lu, and J. D. Meindl, IEEE Trans. Electron Devices ED-30, 137 (1983).
6. M. Kohyama, R. Yamamoto, Y. Ebata, and M. Kinoshita, J. Phys. C 21, 3205 (1988).
7. M. Kohyama and R. Yamamoto, Phys. Rev. B 49, 17102 (1994).
8. H. J. Möller and H. H. Singer, in Computer Calculations of Grain Boundary Energies in Germanium and Silicon (Proceedings) (Springer, Berlin, 1984), pp. 18-26.
9. Y. Ishida and H. Ichinose, in High Resolution Electron Microscopy of the Structure and Chemistry of Grain Boundaries and Other Interfaces in Chemistry (Proceedings) (Springer Berlin, 1988), pp. 42-51.
10. Y. Alpern and J. Shappir, J. Appl. Phys. 63, 2694 (1988).
11. J. W. Tringe, M. D. Deal, and J. D. Plummer (unpublished).
12. N. C.-C. Lu and C.-Y. Lu, Solid-State Electron. 27, 797 (1984).
13. H.-J. Cho, P. B. Griffin, and J. D. Plummer, in Cross Sectional TEM Sample Preparation Using e-beam lithography and Reactive Ion Etching (Proceedings) (MRS, Pittsburgh, 1997), pp. 217-224.
14. J. W. Tringe and J. D. Plummer (unpublished).
15. T. I. Kamins, M. M. Mandurah, and K. C. Saraswat, J. Electrochem. Soc. 928, 927 (1978).
16. M. M. Mandurah, K. C. Saraswat, and T. I. Kamins, J. Electrochem. Soc. 126, 1019 (1979).
17. Avant!, Star-HSPICE: Circuit simulation tool, 98.2 ed. (Avant! Corporation, Fremont, CA, 1997).
18. C. H. Seager and T. G. Castner, J. Appl. Phys. 49, 3879 (1978).
19. G. E. Pike and C. H. Seager, Phys. Rev. B 10, 1421 (1974).
20. C. H. Seager and G. E. Pike, Phys. Rev. B 10, 1435 (1974).
21. J. W. Tringe, M. D. Deal, and J. D. Plummer (unpublished).
22. S. J. Fonash, J. Electrochem. Soc. 137, 3885 (1990).
23. J. M. Heddleson, M. W. Horn, and S. J. Fonash, J. Electrochem. Soc. 137, 1960 (1990).
24. V. Randle, The Measurement of Grain Boundary Geometry (Institute of Physics, Philadelphia, 1993).
25. TeXSEM Inc., Orientation Imaging Microscopy (OIM) Data Collection, 2.6.7 ed. (TexSEM Laboratories, Inc., Draper, Utah, 1999).
26. W. Krühler, J. Grabmaier, and R. Schindler, in Physical Properties of Polycrystalline s-Web Si Ribbons (Proceedings) (Springer, Berlin 1988), pp. 180-185.
27. J.-L. Maurice, in Electron Beam Induced Contrast and Transmission Electron Microscopy Analysis of Special Grain Boundaries in Silicon (Proceedings) (Springer, Berlin, 1988), pp. 83-88.