Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistor

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 405-410

  Kamiya, T ^a,b,c   Tan, Y T ^a,b   Durrani, Z A K ^a,b   Ahmed, H ^a,b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; GRAIN BOUNDARIES; NANOSTRUCTURED MATERIALS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; THERMAL EFFECTS;

SINGLE-ELECTRON TRANSISTORS (SET);

THIN FILM TRANSISTORS;

EID: 0036540402     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01180-2     Document Type: Article

References (16)

1. Single charge tunnelling, Coulomb Blockade phenomena in nanostructures