Control of grain-boundary tunneling barriers in polycrystalline silicon

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2388-2390

  Kamiya, Toshio ^a   Durrani, Zahid A K ^a   Ahmed, Haroon ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE GRAINS; HEAVILY DOPED; POTENTIAL BARRIER HEIGHT; POTENTIAL BARRIERS; STRUCTURAL CHANGE; SURFACE OXYGEN; TUNNELING BARRIER;

ANNEALING; ELECTRIC PROPERTIES; FREONS; GRAIN BOUNDARIES; NANOWIRES; NUCLEAR PHYSICS; POLYSILICON;

OXIDATION;

EID: 79956002051     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509853     Document Type: Article

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