Heteroepitaxial growth of zinc oxide single crystal thin films on (iii) plane ysz by pulsed laser deposition

Materials Research Society Symposium - Proceedings

Volumn 570, Issue , 1999, Pages 309-313

  Ohta, Hiromichi ^a,b   Tanji, Hiroaki ^a,b   Orita, Masahiro ^a,b   Hosono, Hideo ^a,b   Kawazoe, Hiroshi ^a,b  

^a HOYA CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; MORPHOLOGY; PULSED LASER APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SINGLE CRYSTALS; SURFACES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

HALL MOBILITY; HETEROEPITAXIAL GROWTH; PULSED LASER DEPOSITION; YTTRIA STABILIZED ZIRCONIA;

ZINC OXIDE;

EID: 0033328725     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (1)

1. M. A. L. Jonson. S. Fujita. W. H. Rowland, Jr., W. C. Hughes. . 1. W. Cook. J. R. . . 1. F. Schetzina. J. Electronic Materials, 25. 855-862 (1996).