Growth of c-axis oriented GaN films on quartz by pulsed laser deposition

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 15-20

  Wang, Rong Ping ^a   Muto, Hachizo ^a   Kusumori, Takeshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

GaN film; Laser ablation; Quartz; ZnO buffer layer

Indexed keywords

CRYSTALLIZATION; FILM GROWTH; GALLIUM NITRIDE; LASER ABLATION; MORPHOLOGY; NEODYMIUM LASERS; OPACITY; OPTOELECTRONIC DEVICES; PULSED LASER DEPOSITION; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

DEPOSITION TEMPERATURE;

SEMICONDUCTING FILMS;

EID: 0038348733     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00052-1     Document Type: Conference Paper

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