InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 419-422

  Wen, T C ^a   Chang, S J ^a   Su, Y K ^a   Wu, L W ^a,b   Kuo, C H ^a,b   Lai, W C ^a   Sheu, J K ^c   Tsai, T Y ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Green light emitting diode (LED); InGaN GaN; Multiple quantum well (MQW); PL; Reliability

Indexed keywords

GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY; X RAY DIFFRACTION ANALYSIS;

ENERGY BARRIER LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038325609     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0170-7     Document Type: Conference Paper

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