Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 178-181

  Schubert, M ^a   Kasic, A ^a,b   Sik J ^c   Einfeldt, S ^d   Hommel, D ^d   Harle V ^e   Off, J ^e   Scholz, F ^e  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b UNIVERSITY OF LEIPZIG   (Germany)

^c MASARYK UNIVERSITY   (Czech Republic)

^d UNIVERSITY OF BREMEN   (Germany)

^e UNIVERSITY OF STUTTGART   (Germany)

Author keywords

AlGaN; Ellipsometry; Infrared; Optical properties; Strain; Superlattice phonons

Indexed keywords

CHARGE CARRIERS; ELLIPSOMETRY; GALLIUM NITRIDE; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS;

INFRARED ELLIPSOMETRY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035933009     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00722-4     Document Type: Article

References (7)