Structural and morphological characterization of Al/Ti-based ohmic contacts on p-type 4H-SiC annealed under various conditions

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Vassilevski, K V ^a,b   Zekentes, K ^a   Constantinidis, G ^a   Papanicolaou, N ^c   Nikitina, I P ^b   Babanin, A I ^b  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CRYSTAL STRUCTURE; ELECTRIC RESISTANCE; METALLIZING; MORPHOLOGY; NICKEL; NICKEL ALLOYS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TITANIUM; TITANIUM CARBIDE;

NICKEL SILICIDE; SPECIFIC CONTACT RERSISTANCE;

OHMIC CONTACTS;

EID: 0033700915     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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