Studies of electrical and chemical properties of SiO2/Si after rapid thermal nitridation using surface charge spectroscopy and x-ray photoelectron spectroscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 5, 1997, Pages 2787-2792

  Chan, R W M ^a   Kwok, R W M ^a   Lau, W M ^b   Yan, H ^a   Wong, S P ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031536044     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580824     Document Type: Article

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