Extra-atomic relaxation and core-level binding energy shifts at silicon/silicon oxide interfaces: Effects of cluster size on physical models

Journal of Physical Chemistry B

Volumn 102, Issue 20, 1998, Pages 3930-3935

  Zhang, K Z ^a   Banaszak Holl, M M ^a   McFeely, F R ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000513790     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp973254o     Document Type: Article

References (28)

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3. 2 and Its Interfaces; Pantelides, S. T., Lucovsky, G. G., Eds.; Mater. Res. Soc. Symp. Proc., 1990. (e) The Physics and Technology of Amorphous Silicon Dioxide; Helms, C. R., Deal, B. E., Eds.; Plenum: New York, 1989.
4. 2 and Its Interfaces; Pantelides, S. T., Lucovsky, G. G., Eds.; Mater. Res. Soc. Symp. Proc., 1990. (e) The Physics and Technology of Amorphous Silicon Dioxide; Helms, C. R., Deal, B. E., Eds.; Plenum: New York, 1989.
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6. Initial state effects refer to structural and compositional features of the material that influence the energy level of the core state prior to interaction with the exciting photon. In general, any change that effects the valence electron distribution will also cause the energy of the core electrons to vary.
7. Final state effects refer to mechanisms that serve to stabilize (or destabilize) the positively charged core-hole state that is formed upon ejection of the photoelectron from the emitting atom.
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23. The reported value is the average of three runs. The standard deviation is given in parentheses.
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