Modified surface charge spectroscopy for the characterization of insulator/semiconductor structures

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3635-3639

  Chan, R W M ^a   Kwok, R W M ^a   Lau, W M ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038763173     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361190     Document Type: Article

References (12)

1. See for example: S. M. Sze, Semiconductor Devices Physics and Technology (Wiley, New York, 1985).
2. W. M. Lau, Appl. Phys. Lett. 54, 338 (1989).
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4. W. M. Lau and X.-W. Wu, Surf. Sci. 254, 345 (1991).
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6. See for example: E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
7. W. M. Lau, R. W. M. Kwok, and S. Ingrey, Surf. Sci. 271, 579 (1992).
8. R. W. M. Kwok, W. M. Lau, S. Ingrey, and D. Landheer, J. Vac. Sci. Technol. A 10, 754 (1992).
9. See for example: D. Briggs and M. P. Seah, Practical Surface Analysis 2nd ed. (Wiley, New York, 1990), Vol. 1.
10. J. H. Scofield, J. Electron Spectrosc. Relat. Phenom. 8, 129 (1976).
11. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 17, 927 (1991).
12. M. H. Hecht, Phys. Rev. B 41, 7918 (1990).