Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

Applied Physics Letters

Volumn 82, Issue 15, 2003, Pages 2452-2454

  An, Znenghua ^a   Wu, Yanjun ^b   Zhang, Miao ^b   Di, Zengfeng ^b   Lin, Chenglu ^b   Fu, Ricky K Y ^a   Chen, Peng ^a   Chu, Paul K ^a   Cheung, W Y ^c   Wong, S P ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ETCHING; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS;

BUFFER STRUCTURES;

MOSFET DEVICES;

EID: 0037988831     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1567807     Document Type: Article

References (14)

1. L. J. Huang, J. O. Chu, D. F. Cannaperi, C. P. D. Emic, R. M. Anderson, S. J. Koester, and H.-S. P. Wong, Appl. Phys. Lett. 78, 1267 (2001).
2. P. M. Mooney, J. L. Jordansweet, J. O. Chu, and F. K. Legoues, Appl. Phys. Lett. 66, 3642 (1995).
3. T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi, IEEE Electron Device Lett. 21, 230 (2000).
4. Y. Ishikawa, N. Shibata, and S. Fukatsu, Appl. Phys. Lett. 75, 983 (1999).
5. S. Fukatsu, Y. Ishikawa, T. Saito, and N. Shibata, Appl. Phys. Lett. 72, 3485 (1998).
6. L. J. Huang, J. O. Chu, S. A. Goma, C. P. D'Emic, S. J. Koester, D. F. Canaperi, P. M. Mooney, S. A. Cordes, J. L. Speidell, R. M. Anderson, and H.-S. P. Wong, IEEE Trans. Electron Devices 49, 1566 (2002).
7. Z. Y. Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadas, IEEE Electron Device Lett. 22, 321 (2001).
8. L. T. Su, J. B. Jacobs, J. E. Chung, and D. A. Antoniadis, IEEE Electron Device Lett. 15, 366 (1994).
9. Y. Omura, S. Nakashima, K. Izumi, and T. Ishii, Tech. Dig. - Int. Electron Devices Meet. 977, 675 (1991).
10. N. Sugiyama, T. Mizuno, M. Suzuki, and S. Takagi, Jpn. J. Appl. Phys., Part 1 40, 2875 (2001).
11. Y. S. Tang, J. P. Zhang, P. L. F. Hemment, B. J. Sealy, H. Liu, J. E. Castle, S. M. Newstead, A. R. Powell, T. E. Whall, and E. H. C. Parker, J. Appl. Phys. 67, 7151 (1990).
12. N. R. Zangenberg, J. L. Hansen, J. Fage-Pedersen, and A. N. Larsen, Phys. Rev. Lett. 87, 125901 (2001).
13. T. Mizuno, N. Sugiyama, T. Tezuka, and S. Takagi, Appl. Phys. Lett. 80, 601 (2002).
14. T. Tezuka, N. Sugiyama, and S. Takagi, Appl. Phys. Lett. 79, 1798 (2001).