The role of an overlayer in the formation of Ni-based transparent ohmic contacts to p-GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2001, Pages 6221-6225

  Lin, Gong Ru ^a   Pan, Ci Ling ^b  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; LED; Ni; Ohmic contact; Overlayer

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; GOLD; LEAD; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; NICKEL; OXYGEN; PLATINUM; SEMICONDUCTING GALLIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; THRESHOLD VOLTAGE;

CONTACT RESISTIVITY; OVERLAYER;

OHMIC CONTACTS;

EID: 0036150412     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)