Generation-recombination noise in gallium nitride-based quantum well structures

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5337-5345

  Duran, Rolando S ^a   Larkins Jr , Graver L ^a   Van Vliet, Carolyne M ^b   Morkoç, Hadis ^c  

^a FLORIDA INTERNATIONAL UNIVERSITY   (United States)

^b University of Miami   (United States)

^c Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; ENERGY GAP; FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; SPECTROSCOPIC ANALYSIS; SPURIOUS SIGNAL NOISE;

ELECTRONIC NOISE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037986611     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1562000     Document Type: Article

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