Codoping of 4H-SiC with N- and P-donors by Ion implantation

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 791-794

  Laube, M ^a   Schmid, F ^a   Pensl, G ^a   Wagner, G ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Co Doping; Ion implantation; Nitrogen; Phosphorus

Indexed keywords

ALUMINUM COMPOUNDS; ION IMPLANTATION; NITROGEN; PHOSPHORUS; SEMICONDUCTOR DOPING; SILICON CARBIDE; HALL EFFECT;

AL DOPED; CO-DOPING; CRITICAL VALUE; DONOR CONCENTRATIONS; P DONORS; SIC EPILAYERS; SIC FILMS; CODOPING;

NITROGEN COMPOUNDS; SILICON CARBIDE;

EID: 18744438268     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.791     Document Type: Conference Paper

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