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Volumn 217, Issue 1, 2000, Pages 665-684

Paramagnetic defects

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Indexed keywords


EID: 0034339569     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(200001)217:1<665::AID-PSSB665>3.0.CO;2-B     Document Type: Article
Times cited : (23)

References (59)
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    • Harper & Row, New York 1963 Springer-Verlag, Heidelberg
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    • (1980) Springer Ser. Solid State Sci. , pp. 1
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  • 5
    • 0034463318 scopus 로고    scopus 로고
    • Special defects in semiconducting materials
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    • H. OVERHOF, in: Special Defects in Semiconducting Materials, Ed. R. P. AGARWALA, Solid State Phenomena 71, 93 (2000).
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    • Overhof, H.1
  • 6
    • 0001700487 scopus 로고
    • Ed. S. T PANTELIDES, Gordon & Breach, New York
    • G. D. WATKINS, in: Deep Defects in Semiconductors, Ed. S. T PANTELIDES, Gordon & Breach, New York 1986 (p. 177).
    • (1986) Deep Defects in Semiconductors , pp. 177
    • Watkins, G.D.1
  • 21
    • 0000738285 scopus 로고
    • A. ZUNGER, Phys. Rev. B 28 3628 (1983); Solid State Phys. 39, 276 (1986); Phys. Rev. B 11, 849 (1975).
    • (1983) Phys. Rev. B , vol.28 , pp. 3628
    • Zunger, A.1
  • 22
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    • A. ZUNGER, Phys. Rev. B 28 3628 (1983); Solid State Phys. 39, 276 (1986); Phys. Rev. B 11, 849 (1975).
    • (1986) Solid State Phys. , vol.39 , pp. 276
  • 23
    • 4243651242 scopus 로고
    • A. ZUNGER, Phys. Rev. B 28 3628 (1983); Solid State Phys. 39, 276 (1986); Phys. Rev. B 11, 849 (1975).
    • (1975) Phys. Rev. B , vol.11 , pp. 849
  • 30
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    • (1990) Phys. Rev. B , vol.41 , pp. 1603
  • 52
    • 0003987639 scopus 로고    scopus 로고
    • Group III nitride semiconductor compounds
    • Ed. B. GIL, Oxford University Press
    • B. K. MEYER, A. HOFFMANN, and P. THURIAN, Group III Nitride Semiconductor Compounds, Ed. B. GIL, Physics and Applications, Oxford University Press, 1998.
    • (1998) Physics and Applications
    • Meyer, B.K.1    Hoffmann, A.2    Thurian, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.