-
1
-
-
0021439598
-
Catastrophic and latent damage in GaAlAs lasers caused by electrical transients
-
Sim SP, Robertson MJ, Plumb RG. Catastrophic and latent damage in GaAlAs lasers caused by electrical transients. J Appl Phys 1984;55:3950.
-
(1984)
J Appl Phys
, vol.55
, pp. 3950
-
-
Sim, S.P.1
Robertson, M.J.2
Plumb, R.G.3
-
2
-
-
0027608740
-
Degradation in InGaAsP semiconductor lasers resulting from Human Body Model ESD
-
DeChiaro LF, Unger BA. Degradation in InGaAsP semiconductor lasers resulting from Human Body Model ESD. J of Electrostatics 1993;29:227.
-
(1993)
J of Electrostatics
, vol.29
, pp. 227
-
-
DeChiaro, L.F.1
Unger, B.A.2
-
3
-
-
0028715261
-
Sensitivity to electrostatic discharges of "low-cost" 1.3 m laser diodes: A comparative study
-
Wallon J, Terol G, Bauduin B, Devoldere P. Sensitivity to electrostatic discharges of "low-cost" 1.3 m laser diodes: a comparative study. Mat Sci Eng 1994;B28:314.
-
(1994)
Mat Sci Eng
, vol.B28
, pp. 314
-
-
Wallon, J.1
Terol, G.2
Bauduin, B.3
Devoldere, P.4
-
4
-
-
77956509833
-
Interpretation of Failure Analysis Results on ESD-Damaged InP Laser Diodes
-
Vanzi M, Giansante M, Zazzetti L, Magistrali F, Sala D, Salmini G, Fantini F. Interpretation of Failure Analysis Results on ESD-Damaged InP Laser Diodes. In: Proc. of ISTFA'91, 305. 1991.
-
(1991)
In: Proc. of ISTFA'91
, vol.305
-
-
Vanzi, M.1
Giansante, M.2
Zazzetti, L.3
Magistrali, F.4
Sala, D.5
Salmini, G.6
Fantini, F.7
-
5
-
-
0002737939
-
Semiconductor laser damage due to human-body-model electrostatic discharge
-
Twu Y, Cheng LS, Chu SNG, Nash FR, Wang KW, Parayanthal P. Semiconductor laser damage due to human-body-model electrostatic discharge. J Appl Phys 1993;74:1510.
-
(1993)
J Appl Phys
, vol.74
, pp. 1510
-
-
Twu, Y.1
Cheng, L.S.2
Chu, S.N.G.3
Nash, F.R.4
Wang, K.W.5
Parayanthal, P.6
-
6
-
-
0031372784
-
Electrostatic discharge damage to pump lasers while operating
-
Plumb RGS, Jeziorska AM. Electrostatic discharge damage to pump lasers while operating. SPIE Proc 1997;3004:83.
-
(1997)
SPIE Proc
, vol.3004
, pp. 83
-
-
Plumb, R.G.S.1
Jeziorska, A.M.2
-
7
-
-
0342600092
-
-
ESD Association, Rome
-
ESD STM5.1, Sensitivity Testing, Human Body Model, Component Level, ESD Association, Rome, 1998.
-
(1998)
ESD STM5.1, Sensitivity Testing, Human Body Model, Component Level
-
-
-
9
-
-
0031378241
-
Influence of the device geometry and inhomogeneity on the elctrostatic discharge sensitivity of InGaAs/InP avalanche photodetectors
-
Santa Clara
-
Neitzert HC, Cappa V, Crovato R. Influence of the device geometry and inhomogeneity on the elctrostatic discharge sensitivity of InGaAs/InP avalanche photodetectors. In: Proc. of the 19th EOS/ESD Symposium'97, Santa Clara. 1997. p. 18.
-
(1997)
Proc. of the 19th EOS/ESD Symposium'97
, pp. 18
-
-
Neitzert, H.C.1
Cappa, V.2
Crovato, R.3
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