Radiation response of p-channel 6H-SiC MOSFETs fabricated using pyrogenic conditions

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1097-1100

  Lee, Kin Kiong ^a   Ohshima, Takeshi ^a   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Gamma ray irradiation; Interface traps; Oxide charge traps

Indexed keywords

GAMMA RAYS; IRRADIATION; MOSFET DEVICES; CARRIER MOBILITY; INTERFACES (MATERIALS); OXIDES; SILICON CARBIDE;

ACTIVE DEFECTS; GAMMA-RAY IRRADIATION; INTERFACE TRAPS; OXIDE CHARGE; P CHANNELS; RADIATION RESPONSE; SIC MOSFETS; TOTAL DOSE EFFECT; OXIDE CHARGE TRAPS;

SILICON CARBIDE; MOSFET DEVICES;

EID: 0036430462     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1097     Document Type: Conference Paper

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