Ion beam induced charge gate rupture of oxide on 6H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 181, Issue 1-4, 2001, Pages 324-328

  Lee, K K ^a,b   Nishijima, T ^c   Ohshima, T ^a   Jamieson, D N ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF MELBOURNE   (Australia)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

6H SiC; Border trap; Interface trap; Ion beam induced charge; Oxide reliability

Indexed keywords

HIGH FREQUENCY CAPACITANCE VOLTAGE (CV) METHOD; ION BEAM INDUCED CHARGE (IBIC); OXIDE RELIABILITY;

ALPHA PARTICLES; CAPACITANCE MEASUREMENT; ELECTROLUMINESCENCE; HARDNESS; ION BEAMS; IRRADIATION; SILICA; SILICON CARBIDE; VOLTAGE DISTRIBUTION MEASUREMENT;

MOS DEVICES;

EID: 0035387604     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00622-X     Document Type: Conference Paper

References (12)