Characteristics of boron in 4H-SiC layers produced by high-temperature techniques

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 259-262

  Kakanakova Georgieva, A ^a   Yakimova, R ^a   Zhang, J ^a   Storasta, L ^a   Syvajarvi M ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Boron; C V; Cathodoluminescence; DLTS; Sublimation epitaxy; Vertical hot wall CVD

Indexed keywords

BORON; CATHODOLUMINESCENCE; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GROWTH RATE; SILICON CARBIDE; SUBLIMATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; OPTICAL DATA PROCESSING;

OPTICAL MEASUREMENTS; SUBLIMATION EPITAXY; VERTICAL HOT-WALL CVD; ACCEPTOR CONCENTRATIONS; AS-GROWN; C/SI RATIO; CVD PROCESS; HIGH TEMPERATURE TECHNIQUES; OPTICAL MEASUREMENT; VERTICAL HOT WALL;

HIGH TEMPERATURE EFFECTS; GROWTH RATE;

EID: 0037628304     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.259     Document Type: Article

References (8)

1. M. Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova- Georgieva, M.F. MacMillan, A. Henry, Q. Wahab and E. Janzén, J.Crystal Growth 197 (1999) 155.
2. J. Zhang, A. Ellison, A. Henry, M.K. Linnarsson, E. Janzén, J. Cryst. Growth 226 (2001) 267.
3. Mitsui Engineering and Shipbuilding Co., LTD
4. S.G. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, D.J. Larkin, H.S. Kong, T. Troffer and G. Pensl, J. Appl. Phys. 83 (1998) 7909.
5. V.I. Levin, Yu.M. Tairov and V.F. Tsvetkov, Sov. Phys. Semicond. 18 (1984) 747.
6. T. Frank, T. Troffer, G. Pensl, N. Nordell, S. Karlson and A. Schöner, Inst. Phys. Conf. Ser. 142, (1998) 681.
7. B. Aradi, A. Gali, P. Deák, E. Rauls, Th. Frauenheim and N.T. Son, Matrials Science Forum 353-356 (2001) 455.
8. M. Bockstedte, A. Mattausch and O. Pankratov, Materials Science Forum 353-356 (2001) 447.