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Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, V. G. Oding, V. V. Semenov, and V. I. Sokolov, in Problems in the Physics and Technology of Wide-Gap Semiconductors [in Russian] (Leningrad, 1979), p. 164.
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Yu. A. Vodakov and E. N. Mokhov, "A method for obtaining semiconducting silicon carbide," Inventor's Certificate No 403275 (1970); Patents UK: No. 1458445 (1977); Germany: No. 2409005 (1977); USA No. 414572 (1979).
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A Method for Obtaining Semiconducting Silicon Carbide
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Yu. A. Vodakov, A. D. Roenkov, M. G. Ramm, E. N. Mokhov, and Yu. N. Makarov, Phys. Status Solidi 202 177, (1997).
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Yu. A. Vodakov, E. N. Mokhov, A. D. Roenkov, M. E. Boiko, and P. G. Baranov, J. Cryst. Growth 183, 10 (1998).
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Yu. A. Vodakov, E. N. Mokhov, A. D. Roenkov, and M. M. Anikin, Pis'ma Zh. Tekh. Fiz. 5, 367 (1979) [Sov. Tech. Phys. Lett. 5, 147 (1979)].
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0346539805
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Yu. A. Vodakov, E. N. Mokhov, A. D. Roenkov, and M. M. Anikin, Pis'ma Zh. Tekh. Fiz. 5, 367 (1979) [Sov. Tech. Phys. Lett. 5, 147 (1979)].
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11
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0007530148
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Yu. A. Vodakov, G. A. Lomakina, and E. N. Mokhov, Fiz. Tverd. Tela 24, 1377 (1982) [Sov. Phys. Solid State 24, 780 (1982)].
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Fiz. Tverd. Tela
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Yu. A. Vodakov, G. A. Lomakina, and E. N. Mokhov, Fiz. Tverd. Tela 24, 1377 (1982) [Sov. Phys. Solid State 24, 780 (1982)].
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15
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0031396609
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G. V. Saparin, S. K. Obyden, P. V. Ivannikov, E. N. Mokhov, and A. D. Roenkov, Scanning 19, 269 (1997).
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Scanning
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E. N. Mokhov, A. D. Roenkov, G. V. Saparin, and S. K. Obyden, Scanning 18, 67 (1996).
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