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Volumn 41, Issue 5, 1999, Pages 742-745

Progress in the growth and research of crystals for wide-gap semiconducting materials

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[No Author keywords available]

Indexed keywords


EID: 0033239336     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1130861     Document Type: Article
Times cited : (13)

References (16)
  • 3
    • 0009090246 scopus 로고
    • Inventor's Certificate No 403275 Patents UK: No. 1458445 (1977); Germany: No. 2409005 (1977); USA No. 414572 (1979)
    • Yu. A. Vodakov and E. N. Mokhov, "A method for obtaining semiconducting silicon carbide," Inventor's Certificate No 403275 (1970); Patents UK: No. 1458445 (1977); Germany: No. 2409005 (1977); USA No. 414572 (1979).
    • (1970) A Method for Obtaining Semiconducting Silicon Carbide
    • Vodakov, Yu.A.1    Mokhov, E.N.2
  • 8
    • 0009236945 scopus 로고    scopus 로고
    • Author's Abstract of Doctoral Dissertation, St. Petersburg
    • E. N. Mokhov, Author's Abstract of Doctoral Dissertation, St. Petersburg (1998).
    • (1998)
    • Mokhov, E.N.1
  • 10
    • 0346539805 scopus 로고
    • Yu. A. Vodakov, E. N. Mokhov, A. D. Roenkov, and M. M. Anikin, Pis'ma Zh. Tekh. Fiz. 5, 367 (1979) [Sov. Tech. Phys. Lett. 5, 147 (1979)].
    • (1979) Sov. Tech. Phys. Lett. , vol.5 , pp. 147
  • 12
    • 0344003081 scopus 로고
    • Yu. A. Vodakov, G. A. Lomakina, and E. N. Mokhov, Fiz. Tverd. Tela 24, 1377 (1982) [Sov. Phys. Solid State 24, 780 (1982)].
    • (1982) Sov. Phys. Solid State , vol.24 , pp. 780
  • 13
    • 0000270277 scopus 로고
    • Point defects in silicon carbide
    • Ch. 3
    • Yu. A. Vodakov and E. N. Mokhov, "Point Defects in Silicon Carbide," Inst. Phys. Conf. Ser. No. 137, Ch. 3, 197 (1994).
    • (1994) Inst. Phys. Conf. Ser. , vol.137 , pp. 197
    • Vodakov, Yu.A.1    Mokhov, E.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.