Evidence of an impurity band at an n-GaN/sapphire interface

Diamond and Related Materials

Volumn 12, Issue 3-7, 2003, Pages 1127-1132

  Mavroidis, C ^a   Harris, J J ^a   Jackman, R B ^a   Bougrioua, Z ^b   Moerman, I ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

Electrical properties characterization; GaN; Interface electronic properties; Reactive ion etching

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE;

IMPURITY BAND;

INTERFACES (MATERIALS);

DIAMOND;

EID: 0037846142     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00395-3     Document Type: Article

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