Reduced pressure-chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 μm photo-detection

Journal of Crystal Growth

Volumn 255, Issue 1-2, 2003, Pages 8-18

  Masarotto, L ^a   Hartmann, J M ^a   Bremond, G ^b   Rolland, G ^a   Papon, A M ^a   Semeria M N ^a  

^a CEA GRENOBLE   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

A1. Photoluminescence; A1. Quantum confinement; A1. Strained SiGe; A1. Structural properties; A3. Multi quantum wells; A3. Reduced pressure chemical vapor deposition

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ENERGY GAP; EXCITONS; OPTICAL FIBERS; PHONONS; PHOTODETECTORS; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

REDUCED PRESSURE-CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0037732758     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01168-0     Document Type: Article

References (45)

1. Temkin H., Pearsall T.P., Bean J.C., Logan R.A., Luryi S. Appl. Phys. Lett. 48:1986;963.
2. Kesan V.P., May P.G., LeGoues F.K., Iyer S.S. J. Crystal Growth. 111:1991;936.
3. Splett A., Zinke T., Petermann K., Kasper E., Kibbel H., Herzog H.-J., Presting H. IEEE Photonics Technol. Lett. 6:1994;59.
4. Tashiro T., Tatsumi T., Sugiyama M., Hashimoto T., Morikawa T. IEEE Trans. Electron. Dev. 44:1997;545.
5. Bernhard-Höfer K., Zrenner A., Brunner J., Abstreiter G., Wittmann F., Eisele I. Physica E. 2:1998;753.
6. Li C., Yang Q., Wang H., Zhu J., Luo L., Yu J., Wang Q., Li Y., Zhou J., Lin C. Appl. Phys. Lett. 77:2000;157.
7. Jalali B., Naval L., Levi A.F.J. J. Lightwave Technol. 12:1994;930.
8. Janz S., Baribeau J.M., Lockwood D.J., Mc Caffrey J.P., Moisa S., Rowell N.L., Xu D.-X., Lafontaine H., Pearsonand M.R.T. J. Vac. Sci. Technol. A. 18:2000;588.
9. Pearsall T.P., Temkin H., Bean J.C., Luryi S. IEEE Electron Dev. Lett. 7:1986;330.
10. Yoshimoto T., Thomas S.G., Wang K.L., Jalali B. IEICE Trans. Electron. E81-C:1998;1667.
11. Regolini J.L., Bensahel D., Mercier J. Mater. Sci. Eng. B4:1989;407.
12. Fitch J.T. J. Electrochem. Soc. 141:1994;1046.
13. Bodnar S., De Berranger E., Bouillon P., Mouis M., Stotnicki T., Regolini J.L. J. Vac. Sci. Technol. B. 15:1997;712.
14. Jerier P., Dutartre D. J. Electrochem. Soc. 146:1999;331.
15. Fewster P.F. J. Appl. Cryst. 22:1989;64.
16. Bozzo S., Lazzari J.-L., Brémond G. J. Derrien (Thin Solid Films. 380:2000;130.
17. Bean J.C. Proc. IEEE. 80:1992;571.
18. Zhao Q.X., Willander M. J. Appl. Phys. 86:1999;5624.
19. Ben Zid F., Bhouri A., Mejri H., Tlili R., Said M., Lazzari J.-L., Arnaud d'Avitaya F., Derrien J. J. Appl. Phys. 91:2002;9170.
20. Chao C.Y., Chuang S.L. Phys. Rev. B. 46:1992;4110.
21. Naval L., Jalali B., Gomelsky L., Liu J.M. J. lightwave Technol. 12:1996;787.
22. Numerical Data and Functional Relationships in Science and technology, Landolt-Börnstein, Group III, Vol. 17a; Group III, Vol. 22a.
23. Weisbuch C., Winter B. Quantum Semiconductor Structures. Fundamentals and Applications:1991;Academic Press, New York.
24. Robbins D.J., Canham L.T., Barnett S.J., Pitt A.D., Calcott P. J. Appl. Phys. 71:1992;1407.
25. Hartmann J.M., Eymery J., Calvo V. Semicond. Sci. Technol. 17:2002;198.
26. Dutartre D., Brémond G., Souifi A., Benyattou T. Phys. Rev. B. 44:1991;11525.
27. Van de Walle C.G., Martin R.M. Phys. Rev. B. 34:1986;5621.
28. Robbins D.J., Glasper J.L., Gullis A.G., Leong W.Y. J. Appl. Phys. 69:1991;3729.
29. Hartmann J.M., Loup V., Rolland G., Holliger P., Vannuffel C., Semeria M.N. J. Crystal Growth. 236:2002;10.
30. Bozzo S., Lazzari J.-L., Coudreau C., Ronda A., Arnaud d'Avitaya F., Derrien J., Mesters S., Hollaender B., Gergaud P., Thomas O. J. Crystal Growth. 216:2000;171.
31. Jang S.M., Reif R. Appl. Phys. Lett. 59:1991;3162.
32. Meyerson B.S., Uram K.J., LeGoues F.K. Appl. Phys. Lett. 53:1988;2555.
33. Racanelli M., Greve D.W. Appl. Phys Lett. 56:1990;2524.
34. Greve D.W. Mater Sci. Eng. B18:1993;22.
35. Hartmann A., Vescan L., Dieker C., Stoica T., Luth H. Phys. Rev. B. 48:1993;18276.
36. Bremond G., Souifi A., Benyattou T. Thin Solid Films. 222:1992;60.
37. Terashima K., Tajima M., Sakai A., Tatsumi T. J. Crystal Growth. 111:1991;920.
38. Vescan L., Hartmann A., Schmidt K., Dieker Ch., Lüth H. Appl. Phys. Lett. 60:1992;2183.
39. Pidduck A.J., Robbins D.J., Cullis A.G., Leong W.Y., Pitt A.M. Thin Solid Films. 222:1992;78.
40. Dutartre D., Warren P., Chollet F., Gisbert F., Berenguer M., Berbezier I. J. Crystal Growth. 197:1994;78.
41. Lafontaine H., Rowell N.L., Janz S., Xu D.-X. J. Appl. Phys. 86:1999;1287.
42. People R., Bean J.C. Appl. Phys. Lett. 49:1986;229.
43. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
44. Fukatsu S., Usami N., Shiraki Y. Jpn. J. Appl. Phys. 32:1993;1502.
45. Pearsall T.P., Colace L., Di Vergilio A., Jäger W., Stenkamp D., Theodorou G., Presting H., Kasper E. Klaus Thonke Phys. Rev. B. 57:1998;9128.