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Volumn 2, Issue 1-4, 1998, Pages 753-757

Growth and characterization of strained Si1 - XGex multi-quantum-well waveguide photodetectors on (110) Si for 1.3 and 1.55 μm

Author keywords

Interband transitions; Molecular beam epitaxy; Silicon alloys; Waveguides

Indexed keywords

EID: 0037673408 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(98)00154-4 Document Type: Article

Times cited : (4)

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