Si/Si1-xGex photodetectors using three-dimensional growth modes to enhance photoresponse at λ = 1550 nm

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 588-592

  Janz, S ^a   Baribeau, J M ^a   Lockwood, D J ^a   McCaffrey, J P ^a   Moisa, S ^a   Rowell, N L ^a   Xu, D X ^a   Lafontaine, H ^b   Pearson, M R T ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b SiGe Microsystems   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; ENERGY GAP; MORPHOLOGY; PHOTOCURRENTS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ISLAND GROWTH MORPHOLOGY; PHOTOCURRENT SPECTROSCOPY; PHOTORESPONSE;

PHOTODETECTORS;

EID: 0034350350     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582231     Document Type: Article

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