Electrical characterization and the strain compensation effect and thermal stability of B-doped Si1-xGex/Si heterostructures

Semiconductor Science and Technology

Volumn 11, Issue 10, 1996, Pages 1396-1401

  Radamson, H H ^a   Nur, O ^a   Ni, W X ^a   Joelsson, K B ^a   Willander, M ^a   Hultman, L ^a   Hansson, G V ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; ELECTRIC PROPERTIES; HALL EFFECT; LATTICE CONSTANTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

DRIFT MOBILITY; HIGH RESOLUTION RECIPROCAL LATTICE MAPPING; LATTICE DISTORTIONS; SILICON GERMANIDE; STRAIN COMPENSATION EFFECT;

HETEROJUNCTIONS;

EID: 0030259714     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/007     Document Type: Article

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