Profiling of the SiO2-SiC interface using x-ray photoelectron spectroscopy

Materials Research Society Symposium-Proceedings

Volumn 640, Issue , 2001, Pages H3.7.1-H3.7.6

  Ghosh, R N ^a   Ezhilvalavan, S ^a   Golding, B ^a   Mukhopadhyay, S M ^b   Mahadev, N ^b   Joshi, P ^b   Das, M K ^c   Cooper, J A ^d  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b Wright State University   (United States)

^c Arkansas Power Electronics International Inc   (United States)

^d PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85009932342     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. Atomistic mechanisms of oxygen precipitation and thin-Film oxidation of SiC
2. Intrinsic SiC/SiO2 interface states
3. 2-SiC interface
4. High-carbon concentrations at the silicon dioxide-Silicon carbide interface identified by electron energy loss spectroscopy
5. Effect of oxidation and reoxidation on the oxide-Substrate interface of 4H- and 6H-SiC
6. Microscopic structure of the SiO2/Si interface
7. Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface
8. Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001)