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Materials Research Society Symposium-Proceedings

Volumn 640, Issue , 2001, Pages H.3.5.1-H.3.5.12

Nitrogen passivation of the interface states near the conduction band edge in 4H-silicon carbide

(12) Williams, J R a Chung, G Y c Tin, C C c McDonald, K d Farmer, D d Chanana, R K d Pantelides, S T d,f Feldman, L C d,f Weller, R A e Holland, O W f Das, M K c Lipkin, L A c

a AUBURN UNIVERSITY (United States)

b 5Cree Research Inc (United States)

c Vanderbilt University ^*

d VANDERBILT UNIVERSITY (United States)

e VANDERBILT UNIVERSITY (United States)

f OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85009836996 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

References (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.