Stable site and stable charge state of a fluorine atom in Si

Solid State Communications

Volumn 116, Issue 11, 2000, Pages 595-597

  Taguchi, A ^a   Hirayama, Y ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTATIONAL METHODS; ELECTRIC CONDUCTIVITY OF SOLIDS; ETCHING; FERMI LEVEL; FLUORINE; IMPURITIES; POINT DEFECTS;

CHARGE-STATE-DEPENDENT STABLES; CONDUCTIVITY-DEPENDENT ETCHING;

SEMICONDUCTING SILICON;

EID: 0034299614     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00390-2     Document Type: Article

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