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Volumn 338, Issue , 2000, Pages

Vanadium-free semi-insulating 4H-SiC substrates

(10) Mitchel, W C a Saxler, Adam a Perrin, Ronald a Goldstein, Jonathan a Smith, S R a Evwaraye, A O b Solomon, J S a Brady, M c Tsvetkov, V c Carter Jr , C H c

a AIR FORCE RESEARCH LABORATORY (United States)

b UNIVERSITY OF DAYTON (United States)

c Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; BAND STRUCTURE; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; HALL EFFECT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS;

OPTICAL ADMITTANCE SPECTROSCOPY; PHYSICAL VAPOR TRANSPORT (PVT); THERMAL ACTIVATION ENERGY;

SILICON CARBIDE;

EID: 12944265601 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (12)

References (7)

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4
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- ed. Zuzanna Liliental-Weber and Carla Miner, IEEE, Piscataway, NJ
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- Evwaraye, A.O.¹ Smith, S.R.² Mitchel, W.C.³

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