SCOPUS 정보 검색 플랫폼

Volumn , Issue 1, 2002, Pages 240-243

Improvement of electrical properties of MOCVD grown AlxGa 1-xN/GaN heterostructure with isoelectronic Al-doped channel

(8) Li, Jae Hoon a Kim, Jong Hyun a Bae, Sung Bum b Lee, Kyu Suk b Lee, Jae Seung c Kim, Jong Wook c Hahm, Sung Ho a Lee, Jung Hee a

a Kyungpook National University (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

c LG Electronics Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS;

AL INCORPORATION; ALGAN/ALN/GAN; ALGAN/GAN HETEROSTRUCTURES; ALLOY DISORDER SCATTERING; CHANNEL LAYERS; ELECTRICAL CHARACTERISTIC; HIGH QUALITY; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS;

ALUMINUM ALLOYS;

EID: 84875085597 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390033 Document Type: Conference Paper

Times cited : (4)

References (9)

1
- 0031250249
- M. Asif Khan, Q. Chen, Michael S. Shur, B. T. Dermott, J. A. Higgins, J. Birm, W. J. Schaff, and L. F. Eastman, Solid State Electron. 41, 1555 (1997).
- (1997) Solid State Electron. , vol.41 , pp. 1555
- Asif Khan, M.¹ Chen, Q.² Shur, M.S.³ Dermott, B.T.⁴ Higgins, J.A.⁵ Birm, J.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸

2
- 0035278804
- R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 560
- Vetury, R.¹ Zhang, N.Q.² Keller, S.³ Mishra, U.K.⁴

3
- 0035474079
- L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchova, S. Keller, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 22, 457 (2001).
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 457
- Shen, L.¹ Heikman, S.² Moran, B.³ Coffie, R.⁴ Zhang, N.Q.⁵ Buttari, D.⁶ Smorchova, I.P.⁷ Keller, S.⁸ Denbaars, S.P.⁹ Mishra, U.K.¹⁰

4
- 0001607824
- C. K. Shu, J. Ou, H. C. Lin, W. K. Chen, and M. C. Lee, Appl. Phys. Lett. 73, 641 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 641
- Shu, C.K.¹ Ou, J.² Lin, H.C.³ Chen, W.K.⁴ Lee, M.C.⁵

5
- 85083931993
- J. H. Lee, J. H. Kim, H. M. Ko, S. B. Bae, K. S. Lee, Y. H. Cho, S. H. Hahm, Y. H. Lee, and J. H. Lee, MRS 2002 Spring Meeting Proc. 722, k3.5 (2002).
- (2002) MRS 2002 Spring Meeting Proc. , vol.722
- Lee, J.H.¹ Kim, J.H.² Ko, H.M.³ Bae, S.B.⁴ Lee, K.S.⁵ Cho, Y.H.⁶ Hahm, S.H.⁷ Lee, Y.H.⁸ Lee, J.H.⁹

6
- 0033898942
- C. K. Shu, W. H. Lee, Y. C. Pan, C. C. Chen, H. C. Lin, J. Ou, W. H. Chen, W. K, Chen, and M. C. Lee, Solid State Commun. 144, 291 (2000).
- (2000) Solid State Commun. , vol.144 , pp. 291
- Shu, C.K.¹ Lee, W.H.² Pan, Y.C.³ Chen, C.C.⁴ Lin, H.C.⁵ Ou, J.⁶ Chen, W.H.⁷ Chen, W.K.⁸ Lee, M.C.⁹

7
- 0001420126
- D. D. Koleske, M. E. Twigg, A. E. Wickenden, R. L. Henry, R. J. Gorman, J. A. Freitas, and M. Fetemi, Appl. Phys. Lett. 75, 3141(1999).
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3141
- Koleske, D.D.¹ Twigg, M.E.² Wickenden, A.E.³ Henry, R.L.⁴ Gorman, R.J.⁵ Freitas, J.A.⁶ Fetemi, M.⁷

8
- 0000926633
- D. C. Look, and J. R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999).
- (1999) Phys. Rev. Lett. , vol.82 , pp. 1237
- Look, D.C.¹ Sizelove, J.R.²

9
- 0038534536
- J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, Th. Frauenheim, M. I. Heggie, S. Öberg, and P. R. Briddon, Phys. Rev. Lett. 79, 3672 (1997).
- (1997) Phys. Rev. Lett. , vol.79 , pp. 3672
- Elsner, J.¹ Jones, R.² Sitch, P.K.³ Porezag, V.D.⁴ Frauenheim, Th.⁵ Heggie, M.I.⁶ Öberg, S.⁷ Briddon, P.R.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.