Structural properties and intense ultraviolet emission of polycrystalline GaN films on AlN ceramics grown by N plasma-excited CVD

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 223-226

  Kato, Shuji ^a   Yamada, Yoichi ^a   Taguchi, Tsunemasa ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

AlN; GaN; Indium doping; Isoelectronic trap; N plasma excited CVD; Photoluminescence

Indexed keywords

CERAMIC MATERIALS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ISOELECTRONIC TRAP;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18744428887     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00228-0     Document Type: Article

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