Effects of La and Nb modification on the electrical properties of Pb(Zr,Ti)O3 thin films by MOCVD

Integrated Ferroelectrics

Volumn 14, Issue 1-4, 1997, Pages 69-75

  Shimizu, Masaru ^a   Fujisawa, Hironori ^b   Shiosaki, Tadashi ^b  

^a UNIVERSITY OF HYOGO   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; CURRENT DENSITY; LANTHANUM; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NIOBIUM; THIN FILMS;

SWITCHING FATIGUE;

DIELECTRIC FILMS;

EID: 0031331680     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708019978     Document Type: Article

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