Effect of Nb doping on fatigue in lead zirconate titanate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 226-227

  Miura, Kaoru ^a   Tanaka, Masahiro ^a  

^a SONY CORPORATION   (Japan)

Author keywords

DV X ; Fatigue; FeRAM; Ferroelectrics; Nb 4d; PLZT; PZT; PZTN

Indexed keywords

DISCRETE VARIATIONAL CLUSTER METHOD;

ELECTRON ENERGY LEVELS; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; NIOBIUM; SEMICONDUCTOR DOPING;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0030702302     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.226     Document Type: Article

References (6)

1. K. Miura and M. Tanaka: Jpn. J. Appl. Phys. 35 (1996) 2719.
2. K. Miura and M. Tanaka: Jpn. J. Appl. Phys. 35 (1996) 3488.
3. M. V. Raymond, J. Chen and D. M. Smyth, Integrat. Ferroelectr. 5 (1994) 73.
4. See for example, H. Adachi, M. Tsukada and C. Satoko: J. Phys. Soc. Jpn. 45 (1978) 875.
5. H. Adachi: Ryoshi Zairyo Kagaku Nyumon (Introduction to Quantum Material Chemistry) (Sankyo Shuppan, Tokyo, 1991) p. 62 [in Japanese].
6. R. E. Cohen: Nature 358 (1992) 136.