Substrate effects on GaN photoconductive detector performance

Applied Physics Letters

Volumn 75, Issue 1, 1999, Pages 25-27

  Smith, G M ^a   Redwing, J M ^a   Vaudo, R P ^a   Ross, E M ^a   Flynn, J S ^a   Phanse, V M ^a  

^a ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOCONDUCTIVITY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; PHOTOCONDUCTIVE DETECTORS;

PHOTODETECTORS;

EID: 0032620881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124265     Document Type: Article

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