Analysis of the effect of hydrogen-radical annealing for SiO2 passivation

Solar Energy Materials and Solar Cells

Volumn 48, Issue 1-4, 1997, Pages 109-115

  Ikeda, M ^a   Nagayoshi, H ^a   Onozawa, Y ^a   Saitoh, T ^a   Kamisako, K ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Hydrogen radical annealing; SiO2 passivation

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; PASSIVATION; SILICA; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

HYDROGEN RADICAL ANNEALING;

SILICON SOLAR CELLS;

EID: 0031276876     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00078-0     Document Type: Article

References (4)

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3. H. Nozaki, N. Sakuma, H. Ito, Jpn. J. Appl. Phys. 28 (1989) L1708.
4. L.M. Terman, Solid-State Electron. 5 (1962) 285.