Relationship between thermal treatment conditions and minority carrier lifetimes in p-type, FZ Si wafers

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 453-458

  Yoshioka, K ^a   Ishikawa, S ^a   Mimura, M ^a   Saitoh, T ^a  

^a Tokyo A&T Univ   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; DEEP LEVEL TRANSIENT SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; NITROGEN; OXYGEN;

BULK LIFETIMES; MICROWAVE DETECTED PHOTOCONDUCTIVE DECAY METHOD; MINORITY CARRIER LIFETIMES; NITROGEN VACANCY COMPLEX; RECOMBINATION CENTERS;

SILICON WAFERS;

EID: 0035203451     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00126-4     Document Type: Article

References (4)

1. Ohe N., Tsutsui K., Warabisako T., Saitoh T. Solar Energy Materials and Solar Cells. 48:1997;145-150.
2. S. Ishikawa, S. Inoue, T. Saitoh, Diffusion Length Analysis of B-diffused BSF process by Surface Photovoltage, Proceedings of 15th European Photovoltaic Solar Energy Conference, Vienna, 1998.
3. Fuma N., Tashiro K., Kakumoto K., Takano Y. Diffused Nitrogen-Related Deep Level in N-Type Si. Jpn. J. Appl. Phys. 35:1996;1993-1999.
4. A. Seeger, K.P, Phys. Stat. Sol. 29, (1968) 455.