Photoluminescence properties of δ-doped barrier layers in modulation-doped InAlAs/lnGaAs field-effect transistor structures

Journal of Applied Physics

Volumn 89, Issue 3, 2001, Pages 1696-1703

  Watanabe, Kazuo ^a   Yokoyama, Haruki ^b  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013041071     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1338523     Document Type: Article

References (23)

1. L. D. Nguyen, A. S. Brown, M. A. Thompson, and L. M. Jelloian, IEEE Trans. Electron Devices 39, 2007 (1992).
2. P. M. Smith, S. M. J. Jiu, M. Y. Kao, P. Ho, S. C. Wang, K. H. G. Duh, S. T. Fu, and P. C. Chao, IEEE Microwave Guid. Wave Lett. 5, 230 (1995).
3. T. Enoki, M. Tomizawa, Y. Umeda, and Y. Ishii, Jpn. J. Appl. Phys., Part 1 33, 798 (1994).
4. W.-P. Hong, J. Harbison, L. Florez, and J. H. Abeles, IEEE Electron Device Lett. 10, 310 (1989).
5. B. Grandidier, D. Stievenard, J. P. Nys, and X. Wallart, Appl. Phys. Lett. 72, 2454 (1998).
6. T. Laine, K. Saarinen, J. Makinen, P. Hautojarvi, C. Corbel, M. J. Ashwin, and R. C. Newman, Appl. Phys. Lett. 71, 1843 (1997).
7. K. Watanabe and H. Yokoyama, Appl. Phys. Lett. 76, 973 (2000).
8. K. Watanabe and H. Yokoyama, J. Appl. Phys. 86, 4333 (1999).
9. H. Shigekawa, T. Enoki, T. Furuta, and H. Ito, Proceedings of the 8th International Conference on InP and Related Materials (Institute of Electrical and Electronics Engineers, Shuwabisch Gmund, Germany, 1996), p. 681.
10. H. Hayafuji, Y. Yamamoto, N. Yoshida, T. Sonoda, S. Takamiya, and S. Mitsui, Appl. Phys. Lett. 66, 863 (1995).
11. Y. Yamamoto, N. Hayafuji, N. Fujii, K. Kadoiwa, N. Yoshida, T. Sonoda, and S. Takamiya, J. Electron. Mater. 25, 685 (1996).
12. T. Enoki, H. Ito, K. Ikuta, and Y. Ishii, Proceedings of the 7th International Conference on InP and Related Materials (Institute of Electrical and Electronics Engineers, Sapporo, Hokkaido, Japan, 1995), p. 81.
13. M. Sacilotti et al., J. Cryst. Growth 124, 589 (1992).
14. J. I. Pankove, Optical Processes in Semiconductors (Prentice-Hall, Englewood Cliffs, NJ, 1971), p. 57.
15. J. Bohrer, A. Krost, R. Heitz, F. Heinrichsdorff, L. Echey, and D. Bimerg, Appl. Phys. Lett. 68, 1072 (1996).
16. E. Burstein, Phys. Rev. 93, 632 (1954).
17. T. S. Moss, Proc. Phys. Soc. London, Sect. B 76, 775 (1954).
18. K. Eda and M. Inada, J. Appl. Phys. 62, 4236 (1987).
19. T. P. Pearsall, L. Eaves, and J. C. Portal, J. Appl. Phys. 54, 1037 (1983).
20. N. Hayafuji, Y. Yamamoto, T. Ishida, and K. Sato, Appl. Phys. Lett. 69, 4075 (1996).
21. T. Enoki, H. Ito, and Y. Ishii, Solid-State Electron. 41, 1651 (1997).
22. T. Suemitsu, H. Yokoyama, and Y. Ishii, Electron. Lett. 35, 2141 (1999).
23. Y. K. Fukai, Y. Yamane, T. Suemitsu, T. Makimura, and H. Yokoyama, Abstracts of 2000 Topical Workshop on Heterostructure Microelectronics, Kyoto, Japan. 2000, p. 30.