Photoreflectance characterization of a channel layer of InAIAs/InGaAs high electron mobility transistor wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1158-1160

  Sugiyama, Hiroki ^a   Yokoyama, Haruki ^a   Wada, Kazumi ^a,b  

^a NTT CORPORATION   (Japan)

^b Massachusetts Institute of Technology   (United States)

Author keywords

InAlAs InGaAs HEMT; Non destructive characterization; Photoreflectance; Sheet carrier density

Indexed keywords

CARRIER CONCENTRATION; CHARACTERIZATION; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; NONDESTRUCTIVE EXAMINATION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CHANNEL LAYER; CONDUCTION BANDS; INTERSUBBAND ENERGY; PHOTOREFLECTANCE CHARACTERIZATION; SHEET CORNER DENSITY; VALENCE BANDS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032632373     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1158     Document Type: Article

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