Impact of nonlinear drain resistance in bias-stressed InAlAs/InGaAs HEMTs

Electronics Letters

Volumn 35, Issue 24, 1999, Pages 2141-2143

  Suemitsu, T ^a   Yokoyama, H ^a   Ishii, Y ^b  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL STRESS;

NONLINEAR DRAIN RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033222078     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991433     Document Type: Article

References (9)

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2. ENOKI, T., ITO, H., and ISHII, Y.: 'Reliability study of InAlAs/InGaAs HEMTs with a recess-etch stopper and refractory gate metal', Solid-State Electron., 1997, 41, pp. 1651-1656
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8. HAYAFUJI, N., YAMAMOTO, Y., ISHIDA, T., and SATO, K.: 'Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation', Appl. Phys. Lett., 1996, 69, pp. 4075-4077
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