Electroluminescence measurement of InAlAs/InGaAs HEMTS lattice-matched to InP substrates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 681-684

  Shigekawa, N ^a   Enoki, T ^a   Furuta, T ^a   Ito, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTROLUMINESCENCE; GATES (TRANSISTOR); IONIZATION OF SOLIDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

IMPACT IONIZATION; LATTICE MATCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029720571     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)