Defects in as-grown silicon and their evolution during heat treatments

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 341-346

  Vanhellemont, J ^a   Dornberger, E ^a   Esfandyari, J ^a   Kissinger, G ^b   Trauwaert, M A ^c   Bender, H ^c   Graf D ^a   Lambert, U ^a   Von Ammon, W ^a  

^a SILTRONIC AG   (Germany)

^b IHP   (Germany)

^c IMEC   (Belgium)

Author keywords

Crystal pulling; Cz silicon; Grown in defects; Silicon oxide precipitates; Voids

Indexed keywords

AGGLOMERATION; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; HEAT TREATMENT; NUCLEATION; POINT DEFECTS; PRECIPITATION (CHEMICAL);

CRYSTAL PULLING CONDITIONS;

SEMICONDUCTING SILICON;

EID: 0031349853     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.341     Document Type: Article

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