Sensitivity of thermal donor generation in silicon to self-interstitial sinks

Journal of the Electrochemical Society

Volumn 147, Issue 10, 2000, Pages 3899-3906

  Voronkov, V V ^a   Voronkova, G I ^b   Batunina, A V ^b   Falster, R ^a   Golovina, V N ^b   Guliaeva, A S ^b   Tiurina, N B ^b   Milvidski, M G ^b  

^a MEMC Electronic Materials   (Italy)

^b INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SELF INTERSTITIAL SINKS; SURFACE CONTAMINATION; THERMAL DONOR GENERATION;

ANNEALING; CONCENTRATION (PROCESS); COOLING; NITROGEN; OXIDATION; RAPID THERMAL ANNEALING; SURFACES; TEMPERATURE;

SILICON;

EID: 0034294471     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393993     Document Type: Article

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