Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy

Journal of Crystal Growth

Volumn 220, Issue 4, 2000, Pages 341-344

  Lima, A P ^a   Miskys, C R ^a   Karrer, U ^a   Ambacher, O ^a   Wenzel, A ^b   Rauschenbach, B ^c   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

^c UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS;

PLASMA-INDUCED MOLECULAR BEAM EPITAXY; QUATERNARY HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0034514376     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00887-3     Document Type: Article

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