Study on the magnetic and transport properties of low density carrier ferromagnetic semiconductors

Journal of the Physical Society of Japan

Volumn 70, Issue 4, 2001, Pages 1105-1116

  Sakai, Osamu ^a   Suzuki, Shunya ^b   Nishizawa, Kenichi ^c  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c GE Yokogawa Medical Systems   (Japan)

Author keywords

Magnetic polaron; Magnetic semiconductor; Magnetization

Indexed keywords

EID: 0035645763     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.70.1105     Document Type: Article

References (69)

1. For recent comprehensive review see for example, T. Ohno: J. Magn. Magn. Mater. 200 (1999) 110.
2. F. Matsukura, H. Ohno, A. Shen and Y. Sugawara: Phys. Rev. B 57 (1998) 2037.
3. H. Munekata, H. Ohno, S. von Molnár, A. Segmüller, L. L. Chang and L. Esaki: Phys. Rev. Lett. 63 (1989) 1849.
4. H. Ohno, H. Munekata, T. Penney, S. von Molnár and L. L. Chang: Phys. Rev. Lett. 68 (1992) 2664.
5. T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya and Y. Otsuka: J. Crystal Growth 175/176 (1997) 1063.
6. H. Shimizu, T. Hayashi, T. Nishinaga and M. Tanaka: Appl. Phys. Lett. 74 (1999) 398.
7. A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, Y. Ohno, N. Akiba and T. Kuroiwa: Jpn. J. Appl. Phys. 36 (1997) L73.
8. H. Ohno: Mater. Sci. Forum 182-184 (1995) 443.
9. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye: Appl. Phys. Lett. 69 (1996) 363.
10. A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Munekata and H. Ohno: Phys. Rev. B 59 (1999) 5826.
11. A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, H. Ohno. F. Matsukura, A. Shen and Y. Sugawara: Solid State Commun. 103 (1997) 209.
12. H. Munekata, A. Zaslavsky, P. Fumagalli and R. J. Gambino: Appl. Phys. Lett. 63 (1993) 2929.
13. S. Koshihara, A. Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano, H. Takagi and H. Munekata: Phys. Rev. Lett. 78 (1997) 4617.
14. Y. Satoh, N. Inoue, Y. Nishizawa, and J. Yoshino: Extended Abstracts of the 3rd. Symp. of Physics and Application of Spin Related Phenomena in Semiconductors. Nov. 17-18, 1997, Sendai, Japan, p. 23.
15. T. Kasuya and A. Yanase: Rev. Mod. Phys. 40 (1968) 684.
16. For review see for example, A. Mauger and C. Godart: Phys. Rep. 141 (1986) 51.
17. K. Lee and J. C. Suits: Phys. Lett. 34A (1971) 141.
18. Y. Capiomont, Nguyen-Van-Dang, O. Massenet and B. K. Chakraverty: Solid State Commun. 10 (1972) 679.
19. A. Mauger, C. Godart, M. Escorne, J. C. Achard and J. P. Desfours: J. Physique 39 (1978) 1125.
20. T. J. Konno, K. Wakoh, K. Sumiyama and K. Suzuki: Jpn. J. Appl. Phys. Part 2 37 (1998) L787.
21. T. Matsumoto, K. Yamaguchi, K. Yamada and K. Kawaguchi: Extended Abstracts of the 5th. Symp. of Physics and Application of Spin Related Phenomena in Semiconductors, Dec. 16-17, 1999, Sendai, Japan, p. 62.
22. P. G. de Gennes and J. Friedel: J. Phys. Chem. Solids 4 (1958) 71.
23. T. Kasuya and A. Kondo: Solid State Commun. 14 (1974) 253.
24. K. Hirakawa: Extended Abstracts of the 5th. Symp. of Physics and Application of Spin Related Phenomena in Semiconductors, Dec. 16-17, 1999, Sendai, Japan, p. 174, and private communication.
25. Y. Nagai, K. Nagasaka, H. Nojiri, M. Motokawa, F. Matsukura and H. Ohno: Extended Abstracts of the 5th. Symp. of Physics and Application of Spin Related Phenomena, in Semiconductors, Dec. 16-17, 1999, Sendai, Japan, p. 176.
26. Y. Okimoto, T. Katsufuji, T. Ishikawa, A. Urushibara, T. Arima and Y. Tokura: Phys. Rev. Lett. 75 (1995) 9581.
27. T. Kasuya, A. Yanase and T. Takeda: Solid State Commun. 8 (1970) 1543.
28. P. A. Wolff: Semicond. & Semimet. 25 (1988) 413.
29. E. Nagaev: Physics of Magnetic Semiconductors (MIR Publishers, Moscow, 1983).
30. T. Dietl: Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, ed. M. Averous and M. Balkanski (Plenum Press, New York, 1991) p. 83.
31. A. Manger: Phys. Rev. B 27 (1983) 2308.
32. T. Dietl and J. Spalek: Phys. Rev. Lett. 48 (1982) 355.
33. T. Dietl, A. Haury and Y. Merle d'Aubigné: Phys. Rev. B 55 (1997) R3347.
34. M. Umehara: J. Magn. Magn. Mater. 52 (1985) 406.
35. M. Umehara: Phys. Rev. B 36 (1987) 574.
36. M. Umehara: Phys. Rev. B 39 (1989) 7101.
37. M. Umehara: Phys. Rev. B 61 (2000) 12209.
38. K. Kubo: J. Phys. Soc. Jpn. 36 (1974) 32.
39. K. Kubo. D. M. Edward, A. C. M. Green, T. Moraoi and H. Sakamoto: Physics of Manganites, ed. Kaplan and Mahanti (Plenum Publisher, 1999) p. 71.
40. D. M. Edward, A. C. M. Green and K. Kubo: J. Phys.: Condens. Matter 11 (1999) 2791.
41. A. Rangette, A. Yanase and J. Kübler: Solid State Commun. 12 (1973) 171.
42. M. Takahashi, K. Mitsui and M. Umehara: Phys. Rev. B 52 (1995) 16313.
43. M. Takahashi and K. Mitsui: Phys. Rev. B 54 (1996) 11298.
44. M. Takahashi: Phys. Rev. B 56 (1997) 7389.
45. M. Takahashi: Phys. Rev. B 60 (1999) 15858.
46. W. Nolting, S. Mathi Jaya and S. Rex: Phys. Rev. B 54 (1996) 14455.
47. W. Nolting, S. Rex and S. Mathi Jaya and S. Rex: J. Phys.: Condens. Matter 9 (1997) 1301.
48. J. König, H-H. Lin and A. H. MacDonald: Phys. Rev. Lett. 84 (2000) 5628.
49. K. Nishizawa: Master Thesis (Tohoku University, 1999) (unpublished)
50. K. Nishizawa, O. Sakai and S. Suzuki: J. Magn. Magn. Mater. 281&282 (2000) 468, and errata (to be submitted).
51. O. Sakai and S. Suzuki: Physica E (Proc. PASPS200, September 13-15, Sendai, 2000) (in press).
52. H. Akai: Phys. Rev. Lett. 81 (1998) 3002.
53. M. Shirai, T. Ogawa, I. Kitagawa, N. Suzuki: J. Magn. Magn. Mater. 177-181 (1998) 1383.
54. T. Ogawa, M. Shirai, N. Suzuki and I. Kitagawa: J. Magn. Magn. Mater. 196&197 (1999) 428.
55. J. Okabayashi, A. Kimura, T. Mizokawa, A. Fujimori, T. Hayashi and M. Tanaka: Phys. Rev. B 59 (1999) R2486.
56. S. Yunoki, J. Hu, A. Malvezzi, A. Moreo, N. Furukawa and E. Dagotto: Phys. Rev. Lett. 80 (1998) 845.
57. A. Moreo, S. Yunoki and E. Dagotto: Science 283 (1999) 2034.
58. Y. Motome and N. Furukawa: J. Phys. Soc. Jpn. 68 (1999) 3853.
59. Mn ions do not exit on all sites in the diluted semiconductor systems, while magnetic ions locate on all sites in Euchalcogenides. The result of the present calculation is not directly applicable to actual diluted semiconductor systems. The diagonalization of electronic states uses almost all of the computation time. Even when we use a alloy model by reducing magnetic ion sites, the electronic diagonalization part is not reduced. As the first step of study, we use the present model.
60. K. Binder and D. W. Heermann: Monte Carlo Simulation in Statistical Physics, 2nd ed., (Springer-Verlag, Berlin, 1992) p. 19.
61. B. Mehlig, D. W. Heermann and B. M. Forrest: Phys. Rev. B 45 (1992) 679.
62. Usually it is not easy to obtain q(ψ → ψ′). In the present calculation, it has a simple form given by eq. (2.8) because we choose a simple method for the generation of the first step.
63. T. Komori, T. Ishikawa, T. Kuroda, S. Koshihara, F. Minami, J. Yoshino and H. Akinaga: Extended abstract of the 5th. Symp. of Physics and Application of Spin Related Phenomena in Semiconductors, Dec. 16-17, 1999, Sendai, Japan, p. 196.
64. J. A. Gaj, R. Planel and G. Fishman: Solid State Commun. 29 (1979) 435.
65. As seen from the inset of Fig. 8, the level splitting ∼ 0.4 due to the finite size calculation is larger than A = 0.1. In the strict sense we should use much larger value for A. However, the current matrix is non-zero only in the same group when the effect of the potential fluctuation is weak. So we can get smooth curves even when we put A = 0.1.
66. When the electron is bounded not tightly in the square, η will be reduced to near 1/2.
67. 15)
68. It has been shown in ref. 35 by the density functional approach that the inhomogeneous electron density state is not so highly suppressed even when one considers the long range Coulomb interaction.
69. The mode corresponding to the rotation of total spins of magnetic polaron will of course have very low energy. But other modes which cause the short range spatial change of electron spin direction, with the comparable to the magnetic polaron state, will have not so low energy.