Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 284-287

  Minamikawa, Toshiharu ^a,b   Yonezawa, Yasuto ^b   Heya, Akira ^b   Fujimori, Yoshikazu ^a,c   Nakamura, Takashi ^c   Masuda, Atsushi ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^c ROHM CO LTD   (Japan)

Author keywords

Catalytic CVD; Degradation; Ferroelectric PZT capacitor; Hydrogen; SiNx

Indexed keywords

CAPACITORS; CATALYSIS; CHEMICAL VAPOR DEPOSITION; DEGRADATION; ELLIPSOMETRY; FERROELECTRICITY; RANDOM ACCESS STORAGE; REFRACTIVE INDEX; SILICON NITRIDE;

FERROELECTRIC NON-VOLATILE RANDOM ACCESS MEMORIES (FRAM); PASSIVATION FILMS;

FERROELECTRIC THIN FILMS;

EID: 0035801039     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01285-8     Document Type: Conference Paper

References (11)